Optimized signal transmission schemes for high density eDRAM

In this work, optimized signal transmission schemes are proposed to improve the signal transmission speed and area efficiency of high density embedded DRAM (eDRAM). As in the schemes, overdrive scheme is adopted to enhance the drive capability of read word-line (RWL) inverters and reduce inverters area overhead, optimized signal transmission path scheme is proposed to reduce signal transmission loading, and a V-th loss compensation and signal path pre-charge technology are also adopted to improve the data access speed. The proposed schemes are implemented in 1Mb eDRAM on 65nm CMOS technology node. Calculation and simulation results present 20% area reduction on RWL pull-down inverters and 10% data access speed improvement.