Memory devices based on novel alkyl viologen halobismuthate(iii) complexes

被引：19

作者：

Dashitsyrenova, Dolgor D. ^{[1
]}

Adonin, Sergey A. ^{[2
,3
]}

Gorokh, Igor D. ^{[2
,4
]}

Kraevaya, Olga A. ^{[1
,4
]}

Pavlova, Alina, V ^{[5
]}

Abramov, Pavel A. ^{[2
]}

Frolova, Lyubov A. ^{[1
,4
]}

Sokolov, Maxim N. ^{[2
]}

Fedin, Vladimir P. ^{[2
]}

Troshin, Pavel A. ^{[1
,4
]}

机构：

[1] Inst Problems Chem Phys RAS, Semenov Prospect 1, Chernogolovka 142432, Russia

[2] Nikolaev Inst Inorgan Chem SB RAS, Lavrentieva St 3, Novosibirsk 630090, Russia

[3] South Ural State Univ, Lenina St 76, Chelyabinsk 454080, Russia

[4] Skolkovo Inst Sci & Technol, Nobel St 3, Moscow 143026, Russia

[5] Fed Med & Biol Agcy, State Res Ctr, Burnasyan Fed Med Biophys Ctr, Zhivopisnaya St 46, Moscow 123182, Russia

来源：

CHEMICAL COMMUNICATIONS | 2020年 / 56卷 / 64期

基金：

俄罗斯科学基金会;

关键词：

BISMUTH(III) CHLORIDE; ELECTRICAL-PROPERTIES; CRYSTAL-STRUCTURE; PHOTOCHROMISM; HYBRIDS; STATE; SIZE;

D O I：

10.1039/d0cc03732j

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Four novel halobismuthate(iii) complexes with alkyl viologen cations: (R(2)Viol)(2)[Bi2X10] (R =n-butyl,n-pentyl, X = Cl, Br) have been synthesized. Both chloride complexes revealed photochromic behavior and were successfully utilized for the fabrication of OFET-based memory devices with high switching coefficients and good write-read-erase cycling stability.

引用

页码：9162 / 9165

页数：4

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