A solution-processed yttrium oxide gate insulator for high-performance all-solution-processed fully transparent thin film transistors

被引：107

作者：

Song, Keunkyu ^{[1
,2
]}

Yang, Wooseok ^{[1
]}

Jung, Yangho ^{[1
]}

Jeong, Sunho ^{[3
]}

Moon, Jooho ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

[2] Samsung Elect Co LTD, LCD R&D Ctr, Gyeonggi Do 449711, South Korea

[3] Korea Res Inst Chem Technol, Device Mat Res Ctr, Taejon 305600, South Korea

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2012年 / 22卷 / 39期

基金：

新加坡国家研究基金会;

关键词：

FIELD-EFFECT TRANSISTORS; LOW-TEMPERATURE FABRICATION; DOPED ZNO TRANSISTORS; LOW-VOLTAGE; INDIUM OXIDE; SPRAY-PYROLYSIS; BETA-ALUMINA; SOL-GEL; DIELECTRICS; INKS;

D O I：

10.1039/c2jm34162j

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We studied high-k soluble yttrium oxide dielectrics for high performance oxide thin film transistors (TFTs). The electrical characteristics of yttrium oxide show leakage current density as less than 10(-6) A cm(-2) at 2 MV cm(-1) regardless of annealing temperature and a high dielectric constant of nearly 16. For the first time, all solution-processed fully transparent ZnO-TFTs based on spin-coated YOx gate dielectric layers with a small interfacial trap density and high capacitance were demonstrated, exhibiting a field-effect mobility of 135 cm(2) V-1 s(-1), a threshold voltage of 1.73 V, and an on-off current ratio of 5.7 x 10(7) as well as low-voltage operation. In addition to microstructural and electrical analyses for solution-processed YOx dielectrics, we investigated the influences of dielectric-semiconductor interfacial quality on device parameters. Our results suggest that solution-processable fully transparent oxide TFTs have the potential for low-temperature and high-performance application in transparent, flexible devices.

引用

页码：21265 / 21271

页数：7

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