Influence of Oxygen Additions on the Etch Characteristics of TaN Thin Films in CF4/Ar Plasma

被引：1
|
作者：
Joo, Young-Hee [1 ]
Kim, Chang-Il [1 ]
机构：
[1] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 06974, South Korea
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2016年 / 16卷 / 12期
基金：
新加坡国家研究基金会;
关键词：
TaN; X-ray Photoelectron Spectroscopy (XPS); Optical Emission Spectroscopy (OES); HIGH-K;
D O I：
10.1166/jnn.2016.13685
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
TaN thin film was etched by O-2/CF4/Ar plasma. The TaN etching rate and the selectivity of etching TaN thin film relative to SiO2 and photoresist (PR) were investigated as functions of the gas mixing ratio. The maximum etch rate of TaN thin film was 158.1 nm/min in O-2/CF4/Ar (3:10:10 sccm) plasma. Evidence indicated that the mechanism of TaN etching is the breaking of the Ta-N bonds by Ar+ sputtering and subsequent chemical reaction of Ta with O radicals.
引用
收藏
页码：12890 / 12893
页数：4
相关论文
共 50 条
  • [41] Characteristics of a proportional counter filled with CF4 and additions of Xe
    Gavrilyuk, YM
    Gangapshev, AM
    Kuz'minov, VV
    Osetrova, NY
    Panasenko, SI
    Ratkevich, SS
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 2003, 46 (01) : 26 - 31
  • [42] Characteristics of a Proportional Counter Filled with CF4 and Additions of Xe
    Yu. M. Gavrilyuk
    A. M. Gangapshev
    V. V. Kuz'minov
    N. Ya. Osetrova
    S. I. Panasenko
    S. S. Ratkevich
    Instruments and Experimental Techniques, 2003, 46 : 26 - 31
  • [43] Characteristics of a proportional counter filled with CF4 and additions of Xe
    Gavrilyuk, Yu.M.
    Gangapshev, A.M.
    Kuz'minov, V.V.
    Osetrova, N.Ya.
    Panasenko, S.I.
    Ratkevich, S.S.
    Pribory i Tekhnika Eksperimenta, 2003, 46 (01): : 31 - 36
  • [44] Gas ratio effects on the Si etch rate and profile uniformity in an inductively coupled Ar/CF4 plasma
    Zhao, Shu-Xia
    Gao, Fei
    Wang, You-Nian
    Bogaerts, Annemie
    PLASMA SOURCES SCIENCE & TECHNOLOGY, 2013, 22 (01):
  • [45] Etching Characteristics of TaNO Thin Film for Top Electrode Materials Using Inductivity Coupled CF4/Ar Plasma
    Woo, Jong-Chang
    Joo, Young-Hee
    Kang, Pil-Seung
    Kim, Chang-Il
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (12) : 12882 - 12885
  • [46] Mode transition in CF4 + Ar inductively coupled plasma
    Liu, Wei
    Gao, Fei
    Zhao, Shu-Xia
    Li, Xue-Chun
    Wang, You-Nian
    PHYSICS OF PLASMAS, 2013, 20 (12)
  • [47] Etch characteristics of gallium indium zinc oxide thin films in a HBr/Ar plasma
    Kim, Eun Ho
    Xiao, Yu Bin
    Kong, Seon Mi
    Chung, Chee Won
    SURFACE & COATINGS TECHNOLOGY, 2010, 205 : S252 - S256
  • [48] Etching mechanisms of (In, Ga, Zn)O thin films in CF4/Ar/O2 inductively coupled plasma
    Kim, Kwangsoo
    Efremov, Alexander
    Lee, Junmyung
    Kwon, Kwang-Ho
    Yeom, Geun Young
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2015, 33 (03):
  • [49] Etching Characteristics and Mechanisms of TiO2 Thin Films in CF4 + Ar, Cl2 + Ar and HBr + Ar Inductively Coupled Plasmas
    Junmyung Lee
    Alexander Efremov
    Byung Jun Lee
    Kwang-Ho Kwon
    Plasma Chemistry and Plasma Processing, 2016, 36 : 1571 - 1588
  • [50] ON THE EFFECT OF OXYGEN ON PLASMA CHEMICAL KINETICS IN CF4
    Efremov, A. M.
    Bashmakova, D. E.
    Kwon, K. -H.
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA I KHIMICHESKAYA TEKHNOLOGIYA, 2024, 67 (01): : 51 - 59
12345