Influence of Oxygen Additions on the Etch Characteristics of TaN Thin Films in CF4/Ar Plasma

被引：1

作者：

Joo, Young-Hee ^{[1
]}

Kim, Chang-Il ^{[1
]}

机构：

[1] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 06974, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2016年 / 16卷 / 12期

基金：

新加坡国家研究基金会;

关键词：

TaN; X-ray Photoelectron Spectroscopy (XPS); Optical Emission Spectroscopy (OES); HIGH-K;

D O I：

10.1166/jnn.2016.13685

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

TaN thin film was etched by O-2/CF4/Ar plasma. The TaN etching rate and the selectivity of etching TaN thin film relative to SiO2 and photoresist (PR) were investigated as functions of the gas mixing ratio. The maximum etch rate of TaN thin film was 158.1 nm/min in O-2/CF4/Ar (3:10:10 sccm) plasma. Evidence indicated that the mechanism of TaN etching is the breaking of the Ta-N bonds by Ar+ sputtering and subsequent chemical reaction of Ta with O radicals.

引用

页码：12890 / 12893

页数：4

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