Thermal and electrical properties of Tri Glycine Sulpho Phosphate (TGSP) and L-Asparagine doped TGSP crystals

被引：5
作者：
Margaret, M. Beatrice [1 ]
Sankar, R.
Kalainathan, S.
Jayavel, R.
Irusan, T.
机构：
[1] Arignar Anna Govt Arts Coll, Dept Phys, Wallajapet 632513, India
[2] Anna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, India
[3] Vellore Inst Technol, Dept Phys, Vellore 14, Tamil Nadu, India
[4] Presidency Coll, Dept Phys, Madras 5, Tamil Nadu, India
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2006年 / 41卷 / 07期
关键词：
TGS; TGSP; L-Asparagine TGSP; TGA; DTA; dielectric properties;
D O I：
10.1002/crat.200510653
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Tri Glycinsulphate with partial substitution of phosphoric acid, namely Tri Glycine Sulpho Phosphate (TGSP) has been grown by slow cooling method. Habit modifications have been observed with change in the concentration of ortho phosphoric acid (H3PO4). Monoclinic structure of the grown crystals has been confirmed using X-ray diffraction analysis. TGSP crystals doped with L - Asparagine were also grown. The doping effect is qualitatively estimated using FTIR analysis. TGA, DTA studies and dielectric measurements were carried out for pure and L-Asparagine doped TGSP crystals to investigate the thermal and electrical properties of the crystals. (C) 2006 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：712 / 717
页数：6
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