Effect of source extension junction depth and substrate doping concentration on I-MOS device characteristics

被引：8

作者：

Choi, WY ^{[1
]}

Song, JY

Lee, JD

Park, BG

机构：

[1] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea

[2] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 05期

关键词：

avalanche breakdown voltage; design; impact-ionization MOS (I-MOS) device; junction depth; maximum lateral electric field; substrate doping concentration;

D O I：

10.1109/TED.2006.872097

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Some device design issues of the impact-ionization MOS (I-MOS) device are discussed in terms of the junction depth of the source extension region and the substrate doping concentration. It is found that the source extension region is needed to be as shallow as possible in order to minimize the avalanche breakdown voltage. Furthermore, it is observed that the dependence of the threshold voltage of the I-MOS device on the substrate doping concentration is contrary to that of the MOSFET, which is an interesting phenomenon. It is related to the junction abruptness between the channel and the i-region, which is explained by using the concept of maximum lateral electric field.

引用

页码：1282 / 1285

页数：4

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