Investigation of optical and electronic properties in Al-Sn co-doped ZnO thin films

被引：26

作者：

Pan, Zhanchang ^{[1
]}

Tian, Xinlong ^{[1
]}

Hu, Guanghui ^{[1
]}

Xiao, Chumin ^{[1
]}

Wei, Zhigang ^{[1
]}

Wu, Shoukun ^{[2
]}

Li, Zhuliang ^{[2
]}

Deng, Jianfeng ^{[2
]}

机构：

[1] Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China

[2] Huizhou King Brother Elect Technol Co Ltd, Huizhou 516083, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2013年 / 16卷 / 03期

基金：

中国国家自然科学基金;

关键词：

Al-Sn co-doped ZnO; Annealing temperature; Optical band gap; Sol-gel method; SOLAR-CELLS; TRANSPARENT; TEMPERATURE; CONDUCTIVITY; PARAMETERS; GROWTH;

D O I：

10.1016/j.mssp.2012.06.020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Al-Sn co-doped ZnO thin films were deposited onto quartz substrates by sol-gel processing. The surface morphology and electrical and optical properties were investigated at different annealing temperatures. The surface morphology showed a closely packed arrangement of crystallites in all the doped films. As prepared co-doped films show a preferred orientation along an (0 0 2) plane. This preferred orientation was enhanced by increasing the annealing temperature to between 400 degrees C and 500 degrees C, but there was a shift to the (1 0 1) plane when the annealing temperature rose above 500 degrees C. These samples show, on average, 91.2% optical transmittance in the visible range. In this study, the optical band gap of all the doped films was broadened compared with pure ZnO, regardless of the different annealing temperature. The carrier concentration and carrier mobility of the thin films were also investigated. (c) 2012 Elsevier Ltd. All rights reserved.

引用

页码：587 / 592

页数：6

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