Physics-based Switching Model for Cu/SiO2/W Quantum Memristor

被引：0
|
作者：
Nandakumar, S. R. [1 ]
Rajendran, Bipin [1 ]
机构：
[1] New Jersey Inst Technol, Dept Elect & Comp Engn, Newark, NJ 07102 USA
来源：
2016 74TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2016年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页数：2
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