Electronic and optical properties of InSb quantum dots from pseudopotential calculation

被引:6
作者
Rahou, D. [1 ]
Bekhouche, H. [1 ]
Ghezal, E. A. [1 ]
Gueddim, A. [1 ]
Bouarissa, N. [2 ]
Ziani, H. [1 ]
机构
[1] Univ Djelfa, Fac Sci, Mat Sci & Informat Lab, Djelfa 17000, Algeria
[2] Univ Msila, Lab Mat Phys & Its Applicat, Msila 28000, Algeria
关键词
Quantum dots; Optoelectronic properties; InSb; Quantum confinement; OPTOELECTRONIC PROPERTIES; REFRACTIVE-INDEXES; EFFECTIVE MASSES; ENERGY GAPS; HEAVY HOLES; PRESSURE; SEMICONDUCTORS; DEPENDENCE; EXCITONS; WELL;
D O I
10.1016/j.cjph.2020.05.001
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The electronic and optical features of InSb spherical quantum dots have been investigated by a pseudopotential approach as a function of their radius taken in the range 1-10 nm. The direct -and indirect band gaps along with the electron and heavy hole effective masses are all found to be diminished as the quantum dot radius is increased. However, the refractive index, the static-and high frequency dielectric constant as well as the transverse effective charge are shown to be augmented by increasing the quantum dot radius. It is noted that the quantum confinement is of great impact on all the studied quantities for quantum dot radius below 6 nm. This could result in more opportunities to obtain desired optoelectronic properties that cannot be obtained in the bulk InSb materials.
引用
收藏
页码:206 / 213
页数:8
相关论文
共 54 条
[2]  
Adachi S, 2005, WILEY SER MATER ELEC, P1, DOI 10.1002/0470090340
[3]   Magnetic field and dielectric environment effects on an exciton trapped by an ionized donor in a spherical quantum dot [J].
Aghoutane, N. ;
Feddi, E. ;
El-Yadri, M. ;
Bailach, J. Bosch ;
Dujardin, F. ;
Duque, C. A. .
SUPERLATTICES AND MICROSTRUCTURES, 2017, 111 :1082-1092
[4]   Binding energies and optical absorption of donor impurities in spherical quantum dot under applied magnetic field [J].
Al, E. B. ;
Kasapoglu, E. ;
Sakiroglu, S. ;
Sari, H. ;
Sokmen, I ;
Duque, C. A. .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2020, 119
[5]   Quantum confinement effects on the band structure and dielectric properties of nanostructured GaAs [J].
Al Wadiy, Najah Hamed M. ;
Bouarissa, Nadir ;
Khan, M. Ajmal .
PHYSICA SCRIPTA, 2011, 84 (01)
[6]   High-current breakdown of the quantum Hall effect and electron heating in InSb/AlInSb [J].
Alexander-Webber, J. A. ;
Baker, A. M. R. ;
Buckle, P. D. ;
Ashley, T. ;
Nicholas, R. J. .
PHYSICAL REVIEW B, 2012, 86 (04)
[7]  
[Anonymous], 1993, B COLL MED SCI TOHOK
[8]  
[Anonymous], 2006, Springer Handbook of Condensed Matter and Materials Data
[9]   Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications [J].
Ashley, T. ;
Buckle, L. ;
Datta, S. ;
Emeny, M. T. ;
Hayes, D. G. ;
Hilton, K. P. ;
Jefferies, R. ;
Martin, T. ;
Phillips, Tj ;
WaIiis, D. J. ;
Wilding, P. J. ;
Chan, R. .
ELECTRONICS LETTERS, 2007, 43 (14) :777-779
[10]   Morphology control of exciton fine structure in polar and nonpolar zinc sulfide nanorods [J].
Baskoutas, Sotirios ;
Zeng, Zaiping ;
Garoufalis, Christos S. ;
Bester, Gabriel .
SCIENTIFIC REPORTS, 2017, 7