Spin-orbit torque driven multi-level switching in He+ irradiated W-CoFeB-MgO Hall bars with perpendicular anisotropy

被引：24

作者：

Zhao, Xiaoxuan ^{[1
,2
]}

Liu, Yang ^{[1
]}

Zhu, Daoqian ^{[1
]}

Sall, Mamour ^{[2
,3
]}

Zhang, Xueying ^{[1
,4
,5
]}

Ma, Helin ^{[1
]}

Langer, Juergen ^{[6
]}

Ocker, Berthold ^{[6
]}

Jaiswal, Samridh ^{[6
,7
]}

Jakob, Gerhard ^{[7
]}

Klaeui, Mathias ^{[7
]}

Zhao, Weisheng ^{[1
,4
]}

Ravelosona, Dafine ^{[2
,3
]}

机构：

[1] Beihang Univ, Beijing Adv Innovat Ctr Big Data & Brain Comp, Sch Microelect, Fert Beijing Inst, Beijing 100191, Peoples R China

[2] Univ Paris Saclay, CNRS, Ctr Nanosci & Nanotechnol, 10 Blvd Thomas Gobert, F-91120 Palaiseau, France

[3] Spin Ion Technol, 10 Blvd Thomas Gobert, F-91120 Palaiseau, France

[4] Beihang Univ, Qingdao Res Inst, Beihang Goertek Joint Microelect Inst, Qingdao 266000, Peoples R China

[5] Truth Instrument Co Ltd, Qingdao 266000, Peoples R China

[6] Singulus Technol AG, Hanauer Landstr 103, D-63796 Kahl, Germany

[7] Johannes Gutenberg Univ Mainz, Inst Phys, D-55099 Mainz, Germany

来源：

APPLIED PHYSICS LETTERS | 2020年 / 116卷 / 24期

基金：

国家重点研发计划;

关键词：

D O I：

10.1063/5.0010679

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the spin-orbit torque-driven magnetization switching in W/CoFeB/MgO Hall bars with perpendicular magnetic anisotropy. He+ ion irradiation through a mask has been used to reduce locally the effective perpendicular anisotropy at a Hall cross. Anomalous Hall effect measurements combined with Kerr microscopy indicate that the switching process is dominated by domain wall (DW) nucleation in the irradiated region followed by rapid domain propagation at a current density as low as 0.8 MA/cm(2) with an assisting in-plane magnetic field. Thanks to the implemented strong pinning of the DW at the transition between the irradiated and the non-irradiated region, an intermediate Hall resistance state is induced, which is further verified by finite element simulations. Such a method to control electrically multi-level resistances using He+ ion irradiation shows great potential in realizing neuromorphic and memristor devices.

引用

页数：5

共 22 条

[21] Giant Spin Hall Effect and Switching Induced by Spin-Transfer Torque in a W/Co40Fe40B20/MgO Structure with Perpendicular Magnetic Anisotropy
Hao, Qiang
Xiao, Gang
PHYSICAL REVIEW APPLIED, 2015, 3 (03):
[22] Inversion symmetry breaking in spin-orbit torque-induced magnetization switching to improve the recording density of multi-level magnetoresistive random-access memory
Kamihoki, Uraku
Kurokawa, Yuichiro
Fujimoto, Masahiro
Yuasa, Hiromi
JOURNAL OF APPLIED PHYSICS, 2023, 133 (14)

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