Design and simulation of ZnO-based light-emitting diode structures

被引：16

作者：

Han, SY ^{[1
]}

Yang, H

Norton, DR

Pearton, SJ

Ren, F

Osinsky, A

Dong, JW

Hertog, B

Chow, PP

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[3] SVT Associates Inc, Eden Prairie, MN 55344 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2005年 / 23卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1116/1.2131869

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two different types of ZnO-based light-emitting diode structures have been examined using a one-dimensional (ID) simulator that accounts for specific features of the hexagonal semiconductors-strong piezoeffects, existence of spontaneous electric polarization. low efficiency of acceptor activation, and high threading dislocation density (normally, similar to 10(7) - 10(9) cm(-2)) in the material. A hybrid ZnO/CdZnO/AlGaN/GaN structure grown on sapphire avoids problems in achieving robust p-type doping in ZnO. An all-ZnO approach employs a MgZnO/CdZnO/MgZnO double heterostructure grown on a ZnO substrate. Both Structures show a strong sensitivity of emission intensity to doping and layer thicknesses within our simulations. (c) 2005 American Vacuum Society.

引用

页码：2504 / 2509

页数：6

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