Activation Free Electroless Ni for High Aspect Ratio Submicron Vias for Microchip Application

被引:1
作者
Tiwari, C. S. [1 ]
机构
[1] Micron Technol Inc, Manassas, VA USA
来源
ELECTROLESS DEPOSITION PRINCIPLES, ACTIVATION, AND APPLICATIONS | 2011年 / 33卷 / 18期
关键词
COPPER; METAL;
D O I
10.1149/1.3551489
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Electroless (EL) processes have been explored for multiple applications in chip manufacturing over last decade. This paper presents the application of EL Ni for via fill. The inherent seam and void in traditional TiN/W processes for high-aspect-ratio vias pose reliability issues. The approach discussed in this article demonstrates that EL Ni is a feasible alternative to TiN/W for high-aspect-ratio vias. The EL Ni fill provides a void-and seam-free fill; it also presents some unique challenges.
引用
收藏
页码:39 / 47
页数:9
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