Transport and surface conductivity in ZnO

被引:14
作者
Swartz, Craig H. [1 ]
机构
[1] Texas State Univ, Mat Sci Engn & Commercializat Program, San Marcos, TX 78666 USA
关键词
ZINC; PHOTOCONDUCTIVITY; MOBILITY; HYDROGEN; POLAR; LUMINESCENCE; PROGRESS; DONORS; LAYER;
D O I
10.1557/jmr.2012.133
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Control of the electrical properties of ZnO is difficult to achieve. Doping is affected by the presence of a n-type background. Magnetotransport measurements can extract detailed information on donors and acceptors, but characterization is complicated by effects such as the surface conductivity. This conducting layer can be activated by ambient illumination or by heating in the absence of oxygen. There are considerable differences in the behavior of the various polar and nonpolar crystal faces. This paper provides an overview of the properties of ZnO surface conductivity, as well as the methods which have been implemented to account for it while interpreting carrier transport measurements.
引用
收藏
页码:2205 / 2213
页数:9
相关论文
共 70 条
[1]   Influence of spontaneous polarization on the electrical and optical properties of bulk, single crystal ZnO [J].
Allen, M. W. ;
Miller, P. ;
Reeves, R. J. ;
Durbin, S. M. .
APPLIED PHYSICS LETTERS, 2007, 90 (06)
[2]   Bulk transport measurements in ZnO: The effect of surface electron layers [J].
Allen, M. W. ;
Swartz, C. H. ;
Myers, T. H. ;
Veal, T. D. ;
McConville, C. F. ;
Durbin, S. M. .
PHYSICAL REVIEW B, 2010, 81 (07)
[3]   Oxidized noble metal Schottky contacts to n-type ZnO [J].
Allen, M. W. ;
Mendelsberg, R. J. ;
Reeves, R. J. ;
Durbin, S. M. .
APPLIED PHYSICS LETTERS, 2009, 94 (10)
[4]   Infrared dielectric functions and phonon modes of high-quality ZnO films [J].
Ashkenov, N ;
Mbenkum, BN ;
Bundesmann, C ;
Riede, V ;
Lorenz, M ;
Spemann, D ;
Kaidashev, EM ;
Kasic, A ;
Schubert, M ;
Grundmann, M ;
Wagner, G ;
Neumann, H ;
Darakchieva, V ;
Arwin, H ;
Monemar, B .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) :126-133
[5]   Doping Asymmetry Problem in ZnO: Current Status and Outlook [J].
Avrutin, Vitaliy ;
Silversmith, Donald J. ;
Morkoc, Hadis .
PROCEEDINGS OF THE IEEE, 2010, 98 (07) :1269-1280
[6]   Origin of the giant negative photoresistance of ZnO single crystals [J].
Barzola-Quiquia, J. ;
Esquinazi, P. ;
Villafuerte, M. ;
Heluani, S. P. ;
Poeppl, A. ;
Eisinger, K. .
JOURNAL OF APPLIED PHYSICS, 2010, 108 (07)
[7]   Experimental Electron Mobility in ZnO: A Reassessment Through Monte Carlo Simulation [J].
Bertazzi, Francesco ;
Bellotti, Enrico ;
Furno, Enrico ;
Goano, Michele .
JOURNAL OF ELECTRONIC MATERIALS, 2009, 38 (08) :1677-1683
[8]   Causes of incorrect carrier-type identification in van der Pauw-Hall measurements [J].
Bierwagen, Oliver ;
Ive, Tommy ;
Van de Walle, Chris G. ;
Speck, James S. .
APPLIED PHYSICS LETTERS, 2008, 93 (24)
[9]   Residual Doping in Homoepitaxial Zinc Oxide Layers Grown by Metal Organic Vapor Phase Epitaxy [J].
Bisotto, Isabelle ;
Granier, Carole ;
Brochen, Stephane ;
Ribeaud, Alexandre ;
Ferret, Pierre ;
Chicot, Gauthier ;
Rothman, Johan ;
Pernot, Julien ;
Feuillet, Guy .
APPLIED PHYSICS EXPRESS, 2010, 3 (09)
[10]   Full piezoelectric tensors of wurtzite and zinc blende ZnO and ZnS by first-principles calculations [J].
Catti, M ;
Noel, Y ;
Dovesi, R .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2003, 64 (11) :2183-2190