Full-three dimensional quantum approach to evaluate the surface-roughness-limited magnetoresistance mobility in SNWT

被引：4

作者：

Buran, C. ^{[1
]}

Pala, M. G. ^{[1
]}

Bescond, M. ^{[2
]}

Mouis, M. ^{[1
]}

机构：

[1] IMEP LAHC MINATEC UMR CNRS INPG UJF, F-38016 Grenoble, France

[2] L2MP, F-13384 Marseille, France

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2008年 / 7卷 / 03期

关键词：

Nanowire; Quantum simulation; Magnetoconductance; Surface roughness;

D O I：

10.1007/s10825-008-0196-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a theoretical method to simulate magnetotransport in silicon nanowire (Si-NW) MOSFET including the effect of Surface Roughness (SR). We use a full three dimensional (3D) real-space self-consistent Poisson-Schrodinger solver based on Non Equilibrium Green's function Formalism (NEGF) which can treat the influence of an external magnetic field on the device. By comparing magnetoconductance curves with the classical Drude formula we extract magnetoresistance (MR) mobility for nanowires with and without roughness. From the preliminary results it seems that the MR mobility is not dramatically reduced for the SR parameters considered in this work.

引用

页码：328 / 331

页数：4

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