Selenization mechanisms of Sn and Zn investigated using in situ high-temperature X-ray diffraction

被引：11

作者：

Han, Jaesung ^{[1
]}

Jeon, Soyoung ^{[1
]}

Kim, Woo Kyoung ^{[1
]}

机构：

[1] Yeungnam Univ, Sch Chem Engn, Gyongsan 712749, Gyeongbuk, South Korea

来源：

THIN SOLID FILMS | 2013年 / 546卷

关键词：

Cu2ZnSnSe4; CZTS; Sn loss; Selenization mechanism; High-temperature XRD; BILAYER PRECURSOR FILM; REACTION-KINETICS; THIN-FILMS; SYSTEM;

D O I：

10.1016/j.tsf.2013.04.084

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The selenization mechanism of Sn and Zn thin films was investigated by in situ high-temperature X-ray diffraction analysis of glass/Mo/Sn(/Se) and glass/Mo/Zn(/Se) precursors. The Sn and Zn layers were deposited by sputtering, and amorphous Se layer was added by evaporation. Based on the results of isothermal reactions at different set temperatures, the kinetic parameters for the transformation of the SnSe2 to SnSe phases and the selenization of Zn to ZnSe were estimated. It was found that severe Sn loss also occurred during the selenization of glass/Mo/Sn/Se precursor, while Zn loss was relatively negligible during the selenization of glass/Mo/Zn/Se precursor. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：321 / 325

页数：5

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