Advanced Particle Contamination Control in EUV Scanners

被引：30

作者：

van de Kerkhof, Mark ^{[1
]}

van Empel, Tjarko ^{[1
]}

Lercel, Michael ^{[1
]}

Smeets, Christophe ^{[1
]}

van de Wetering, Ferdi ^{[1
]}

Nikipelov, Andrey ^{[1
]}

Cloin, Christian ^{[1
]}

Yakunin, Andrei ^{[1
]}

Banine, Vadim ^{[1
]}

机构：

[1] ASML Netherlands BV, De Run 6501, NL-5504 DR Veldhoven, Netherlands

来源：

EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY X | 2019年 / 10957卷

关键词：

EUV; Defects; Particles; Contamination; Pellicle;

D O I：

10.1117/12.2514874

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

With the introduction of the NXE:3400B scanner, ASML has brought EUV to High-Volume Manufacturing (HVM). In this context, ASML is pursuing a dual-path approach towards zero reticle defectivity: EUV-compatible pellicle or zero particles towards reticle by advanced particle contamination control. This paper will focus on the latter approach of advanced particle contamination control and will show that we are able to reduce particle contamination towards reticle to a level that is compatible with HVM requirements for sub-10nm node lithography. This paper will present several advancements in understanding and control of flow-related forces on particles as well as particle forces related to EUV-induced plasma, for EUV sources up to 250W and beyond. It will be shown that with these particle contamination control concepts, ASML can offer customers the freedom of choice between pellicle or pellicle-less operation for HVM-EUV, depending on chip design, other details of the layer to be exposed and fab operational requirements.

引用

页数：13

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