Electrical transport in C-doped GaAs nanowires: surface effects

被引：16

作者：

Casadei, Alberto ^{[1
]}

Schwender, Jil ^{[2
]}

Russo-Averchi, Eleonora ^{[1
]}

Rueffer, Daniel ^{[1
]}

Heiss, Martin ^{[1
]}

Alarco-Llado, Esther ^{[1
]}

Jabeen, Fauzia ^{[3
]}

Ramezani, Mohammad ^{[1
]}

Nielsch, Kornelius ^{[2
]}

Fontcuberta i Morral, Anna ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Lab Semicond Mat, CH-1015 Lausanne, Switzerland

[2] Univ Hamburg, Inst Appl Phys, D-20355 Hamburg, Germany

[3] Ecole Polytech Fed Lausanne, Lab Quantum Optoelect, CH-1015 Lausanne, Switzerland

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2013年 / 7卷 / 10期

基金：

瑞士国家科学基金会; 欧洲研究理事会;

关键词：

nanowires; doping; surface passivation; III-V semiconductors; GaAs; carrier mobility; SOLAR-CELLS; TRANSISTORS; SILICON; LIMIT;

D O I：

10.1002/pssr.201307162

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The resistivity and mobility of carbon-doped GaAs nanowires have been studied for different doping concentrations. Surface effects have been evaluated by comparing unpassivated with passivated nanowires. We directly see the influence of the surface: the pinning of the Fermi level and the consequent existence of a depletion region lead to an increase of the mobility up to 30 cm(2)/Vs for doping concentrations lower than 3 x 10(18) cm(-3). Electron beam induced current measurements show that the minority carrier diffusion path can be as high as 190 nm for passivated nanowires. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

引用

页码：890 / 893

页数：4

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