Global well-posedness of weak solutions and a regularity criterion of strong solutions for an epitaxial growth model

被引：1

作者：

Fan, Jishan ^{[1
]}

Samet, Bessem ^{[2
]}

Zhou, Yong ^{[3
]}

机构：

[1] Nanjing Forestry Univ, Dept Appl Math, Nanjing 210037, Jiangsu, Peoples R China

[2] King Saud Univ, Coll Sci, Dept Math, POB 2455, Riyadh 11451, Saudi Arabia

[3] Sun Yat Sen Univ, Sch Math Zhuhai, Zhuhai 519082, Peoples R China

来源：

APPLIED MATHEMATICS LETTERS | 2018年 / 80卷

关键词：

Weak solution; Strong solution; Epitaxy; Thin film; THIN-FILM EPITAXY; CRYSTAL-SURFACES; STEP MOTION;

D O I：

10.1016/j.aml.2017.12.023

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

In this paper, we first prove global well-posedness of weak solutions for an epitaxial growth model with L-2 initial data in any dimension d. Then, we establish a regularity criterion of strong solutions with dimension d >= 3. (C) 2018 Elsevier Ltd. All rights reserved.

引用

页码：8 / 11

页数：4

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