An ESCA study of the Ar ions sputtering effect on diamond

被引：0

作者：

Liu, LM ^{[1
]}

Lin, ZD ^{[1
]}

Guo, Y ^{[1
]}

Yang, DQ ^{[1
]}

Sun, YI ^{[1
]}

Ralchenko, V ^{[1
]}

机构：

[1] Lanzhou Inst Phys, Lab Appl Surface Phys, Lanzhou 73000, Peoples R China

来源：

MECHANICS AND MATERIAL ENGINEERING FOR SCIENCE AND EXPERIMENTS | 2001年

关键词：

MPCVD diamond; Ar ion sputtering effect; X-ray photoelectron spectroscopy (XPS);

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Irradiation effect of Ar ions beam on diamond synthesized by MTCVD has been studied in situ by XPS technique. The spectra, including C1s, C KLL (XAES spectra) and C VBS (XPS valence band spectra), are analyzed qualitatively and quantitatively. The results show that there exists extensive structural change induced by ions sputtering which develops local sp(3) hybridized carbon (diamond) into sp(2) hybridized carbon (graphite). The mechanism of chemical state change in diamond surface due to ion bombardment is also discussed by thermal spike model.

引用

页码：573 / 576

页数：4

共 8 条

[1]

Dementjev AP, 1996, SURF INTERFACE ANAL, V24, P517, DOI 10.1002/(SICI)1096-9918(199608)24:8<517::AID-SIA154>3.0.CO

[2]

2-L

[3] EVALUATION OF THE SP2/SP3 RATIO IN AMORPHOUS-CARBON STRUCTURE BY XPS AND XAES [J].

LASCOVICH, JC ;

GIORGI, R ;

SCAGLIONE, S .

APPLIED SURFACE SCIENCE, 1991, 47 (01) :17-21

[4] INVESTIGATION OF THE ELECTRONIC-STRUCTURE OF THIN DIAMOND FILMS BY PHOTOELECTRON-SPECTROSCOPY [J].

MANSOUR, A ;

INDLEKOFER, G ;

OELHAFEN, P .

APPLIED SURFACE SCIENCE, 1991, 48-9 :312-318

[5] X-RAY PHOTOEMISSION STUDIES OF DIAMOND, GRAPHITE, AND GLASSY CARBON VALENCE BANDS [J].

MCFEELY, FR ;

KOWALCZYK, SP ;

LEY, L ;

CAVELL, RG ;

POLLAK, RA ;

SHIRLEY, DA .

PHYSICAL REVIEW B, 1974, 9 (12) :5268-5278

[6]

STUART TJ, 1995, APPL SURF SCI, V90, P195

[7] DAMAGE THRESHOLD FOR ION-BEAM-INDUCED GRAPHITIZATION OF DIAMOND [J].

UZANSAGUY, C ;

CYTERMANN, C ;

BRENER, R ;

RICHTER, V ;

SHAANAN, M ;

KALISH, R .

APPLIED PHYSICS LETTERS, 1995, 67 (09) :1194-1196

[8]

YUSUKE M, 1987, J VAC SCI TECHNOL A, V5, P2809

← 1 →