III-V/silicon photonic integrated circuits for communication and sensing applications

被引:0
作者
Roelkens, Gunther [1 ]
Keyvaninia, Shahram [1 ]
Stankovic, Stevan [1 ]
De Koninck, Yannick [1 ]
Tassaert, Martijn [1 ]
Mechet, Pauline [1 ]
Spuesens, Thijs [1 ]
Hattasan, N. [1 ]
Gassenq, A. [1 ]
Muneeb, M. [1 ]
Ryckeboer, E. [1 ]
Ghosh, Samir [1 ]
Van Thourhout, D. [1 ]
Baets, R. [1 ]
机构
[1] Univ Ghent, IMEC, INTEC Dept, Photon Res Grp, B-9000 Ghent, Belgium
来源
INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES XVII | 2013年 / 8627卷
关键词
heterogeneous integration; silicon-on-insulator; ON-CHIP; SILICON; PHOTODIODES; SOI;
D O I
10.1117/12.2001304
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper we review our work in the field of heterogeneous integration of III-V semiconductors and non-reciprocal optical materials on a silicon waveguide circuit. We elaborate on the heterogeneous integration technology based on adhesive DVS-BCB die-to-wafer bonding and discuss several device demonstrations. The presented devices are envisioned to be used in photonic integrated circuits for communication applications (telecommunications and optical interconnects) as well as in spectroscopic sensing systems operating in the short-wave infrared wavelength range.
引用
收藏
页数:8
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