Interstitial Mn2+-Driven High-Aspect-Ratio Grain Growth for Low-Trap-Density Microcrystalline Films for Record Efficiency CsPbl2Br Solar Cells

被引：408

作者：

Bai, Dongliang ^{[1
,2
]}

Zhang, Jingru ^{[1
,2
]}

Jin, Zhiwen ^{[1
,2
]}

Bian, Hui ^{[1
,2
]}

Wang, Kang ^{[1
,2
]}

Wang, Haoran ^{[1
,2
]}

Liang, Lei ^{[1
,2
]}

Wang, Qian ^{[1
,2
]}

Liu, Shengzhong Frank ^{[1
,2
,3
,4
]}

机构：

[1] Shaanxi Normal Univ, Shaanxi Engn Lab Adv Energy Technol, Key Lab Appl Surface & Colloid Chem, Minist Educ,Shaanxi Key Lab Adv Energy Devices, Xian 710119, Shaanxi, Peoples R China

[2] Shaanxi Normal Univ, Sch Mat Sci & Engn, Xian 710119, Shaanxi, Peoples R China

[3] Chinese Acad Sci, Dalian Natl Lab Clean Energy, Dalian 116023, Peoples R China

[4] Chinese Acad Sci, Dalian Inst Chem Phys, IChEM, Dalian 116023, Peoples R China

来源：

ACS ENERGY LETTERS | 2018年 / 3卷 / 04期

基金：

中国国家自然科学基金;

关键词：

ELECTRON-TRANSPORT LAYER; HALIDE PEROVSKITES; STABILITY; PERFORMANCE; STABILIZATION; ALPHA-CSPBI3; DEGRADATION; LIFETIME; HYBRID; ENERGY;

D O I：

10.1021/acsenergylett.8b00270

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

It is imperative to develop a large-aspect-ratio grain-based thin film with low trap density for high-performance inorganic perovskite CsPbI2Br solar cells. Herein, by using Mn2+ ion doping to modulate film growth, we achieved CsPbI2Br grains with aspect ratios as high as 8. It is found that Mn2+ ions insert into the interstices of the CsPbI2Br lattice during the growth process, leading to suppressed nucleation and a decreased growth rate. The combination aids in the achievement of larger CsPbI2Br crystalline grains for increased J(SC) values as high as 14.37 mA/cm(2) and FFs as large as 80.0%. Moreover, excess Mn2+ ions passivate the grain boundary and surface defects, resulting in effectively decreased recombination loss with improved hole extraction efficiency, which enhances the built-in electric field and hence increases V-OC to 1.172 V. As a result, the champion device achieves stabilized efficiency as high as 13.47%, improved by 13% compared with only 11.88% for the reference device.

引用

页码：970 / +

页数：17

共 62 条

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