High-voltage field-controlled integrated thyristor

被引:4
作者
Grekhov, I. V. [1 ]
Rozhkov, A. V. [1 ]
Kostina, L. S. [1 ]
Konovalov, A. V. [2 ]
Fomenko, Yu. L. [2 ]
机构
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] ZAO VZZP Mikron, Voronezh 394033, Russia
关键词
SWITCHING CHARACTERISTICS;
D O I
10.1134/S1063784213010088
中图分类号
O59 [应用物理学];
学科分类号
摘要
The design and technology of powerful field-controlled integrated thyristors, new energy-saving devices intended for converter equipment, are considered. The turn-on and turn-off current and voltage waveforms of the n+p'N-n'p (+) microthyristor chip are presented, and turn-on and turn-off mechanisms are discussed. The development of local dynamic breakdown at turn-off is experimentally studied. The respective waveforms for this process are given, and the type of breakdown at a current density of about 150 A/cm(2) is demonstrated. The current-voltage characteristics in the on state at room temperature and at 125A degrees C indicate the temperature dependence changes sign at a current density above 60 A/cm(2), becoming positive. This is significant for parallel operation of microthyristor chips in a module. It is shown that the static and dynamic characteristics of simple-in-design field-controlled integrated thyristors are highly competitive with those of insulated-gate bipolar transistors-basic devices of advanced high-power converter equipment.
引用
收藏
页码:100 / 104
页数:5
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