Analysis and modeling of on-chip charge pump designs based on pumping gain increase circuits with a resistive load

被引:13
作者
Hu, Chih-Huei [1 ]
Chang, Lon-Kou [1 ]
机构
[1] Natl Chiao Tung Univ, Elect & Control Engn Dept, Hsinchu 300, Taiwan
关键词
charge pump; dc-dc converter; equivalent model; high-voltage generator; voltage multiplier;
D O I
10.1109/TPEL.2008.926950
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A complete equivalent model and analysis of high-efficiency charge-pump gain-increase (PGI) circuits with resistive loads are proposed. Based on this simple analytical model, the characteristics of PGI circuits can be approximately predicted and several handy equations, which are useful for pencil-and-paper design, can also be found for planning the desired circuit to achieve good enough performance with an acceptable accuracy tolerance in the steady state. In addition, an optimized design method for PGI circuits with resistive loads is developed in terms of the total number of gain stages in the design and the ratio between pump capacitors. For 1.5 V supply voltage operation, reliability and accuracy are demonstrated by comparisons between SPICE simulations of the PGI circuit and the results from the equivalent model. The model also has been validated by means of measurements taken from a test chip and typically shows relative open-loop output voltage errors lower than 8%. Finally, although the derivation of the model was based on a PGI circuit, it is shown that the design strategy can also be applied to other charge pump designs that have no voltage drop between the inner stages and the output stage.
引用
收藏
页码:2187 / 2194
页数:8
相关论文
共 17 条
[1]   Self-powered signal processing using vibration-based power generation [J].
Amirtharajah, R ;
Chandrakasan, AP .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1998, 33 (05) :687-695
[2]   High efficiency MOS charge pumps based on exponential-gain structure with pumping gain increase circuits [J].
Chang, Lon-Kou ;
Hu, Chih-Huei .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2006, 21 (03) :826-831
[3]  
Choi KH, 1997, 1997 SYMPOSIUM ON VLSI CIRCUITS, P61, DOI 10.1109/VLSIC.1997.623807
[4]   ON-CHIP HIGH-VOLTAGE GENERATION IN MNOS INTEGRATED-CIRCUITS USING AN IMPROVED VOLTAGE MULTIPLIER TECHNIQUE [J].
DICKSON, JF .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (03) :374-378
[5]   A compact switched-capacitor regulated charge pump power supply [J].
Gregoire, B. Robert .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2006, 41 (08) :1944-1953
[6]   Bit-line clamped sensing multiplex and accurate high voltage generator for quarter-micron flash memories [J].
Kawahara, T ;
Kobayashi, T ;
Jyouno, Y ;
Saeki, S ;
Miyamoto, N ;
Adachi, T ;
Kato, M ;
Sato, A ;
Yugami, J ;
Kume, H ;
Kimura, K .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1996, 31 (11) :1590-1600
[7]  
LAI SY, 2001, P S IEEE ISCAS 01 MA, V4, P406
[8]  
Lin HC, 1999, ISCAS '99: PROCEEDINGS OF THE 1999 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL 1, P238, DOI 10.1109/ISCAS.1999.777847
[9]   AN ON-CHIP BACK-BIAS GENERATOR FOR MOS DYNAMIC MEMORY [J].
MARTINO, WL ;
MOENCH, JD ;
BORMANN, AR ;
TESCH, RC .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (05) :820-826
[10]  
MONNA GLE, 1994, P 1994 IEEE INT S CI, V5, P747