Edge chipping of silicon wafers in diamond grinding

被引：58
作者：
Gao, Shang [1 ]
Kang, Renke
Dong, Zhigang
Zhang, B. [2 ]
机构：
[1] Dalian Univ Technol, Inst Adv Mfg Technol, Sch Mech Engn,Minist Educ, Key Lab Precis & Nontradit Machining Technol, Dalian 116024, Peoples R China
[2] Univ Connecticut, Dept Mech Engn, Storrs, CT 06269 USA
来源：
INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE | 2013年 / 64卷
基金：
美国国家科学基金会;
关键词：
Silicon wafer; Wafer thinning; Diamond grinding; Edge chipping;
D O I：
10.1016/j.ijmachtools.2012.08.002
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Although diamond grinding is the most commonly used machining technique in silicon wafer thinning, it often induces edge chipping which leads to wafer breakage. This study investigates edge chipping of silicon wafer in diamond grinding. The study correlates edge chipping with the crystallographic orientation and thickness of a silicon wafer, as well as grinding process conditions, such as wheel grit size, grinding mode and feed rate. It identifies edge chipping in terms of critical thickness, geometry and dimensions. The study discusses the mechanisms of edge chipping based on machining mechanics and energy theories. Conclusions are drawn to summarize the study. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：31 / 37
页数：7
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