Heat treatment effect on the resistivity of polycrystalline silicon films

被引：2

作者：

Yousfi, S. ^{[1
]}

Hadjoudja, B. ^{[1
]}

Chouial, B. ^{[1
]}

Djedid, N. ^{[1
]}

Chibani, A. ^{[1
]}

机构：

[1] Univ Badji Mokhtar, Semicond Lab, Dept Phys, Annaba, Algeria

来源：

SURFACE ENGINEERING | 2012年 / 28卷 / 09期

关键词：

Silicon; Polycrystalline; Films; Temperature; Resistivity; Implantation; PASSIVATION;

D O I：

10.1179/1743294412Y.0000000045

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, we are interested in the heat treatment effects on the resistivity variations of the polycrystalline silicon films. The obtained results have shown that the resistivity of the neutral regions varies with the temperature, and its contribution to the global resistivity becomes more and more important with the increase of the heat treatment temperature. On the other hand, it was found that, for the polycrystalline silicon films thermally treated before implantation, the resistivity remains invariable and varies only for high heat treatment temperatures.

引用

页码：715 / 717

页数：3

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