HIGH-RATE HIGH-DENSITY ICP ETCHING OF GERMANIUM

被引：0

作者：

Lagov, P. B. ^{[1
,2
]}

Maslovsky, V. M. ^{[3
]}

Pavlov, Yu. S. ^{[2
]}

Rogovsky, E. S. ^{[1
]}

Drenin, A. S. ^{[1
]}

Bondariev, V. A. ^{[4
]}

机构：

[1] Natl Univ Sci & Technol MISiS NUST MISiS, Dept Semicond Elect & Semicond Phys, Moscow 119049, Russia

[2] Russian Acad Sci IPCE RAS, AN Frumkin Inst Phys Chem & Electrochem, Lab Radiat Technol, Moscow 119071, Russia

[3] State Univ, Moscow Inst Phys & Technol, Dept Micro & Nanoelect, 9 Inst Skii Lane, Dolgoprudnyi 141700, Moscow Region, Russia

[4] Lublin Univ Technol, Dept Elect Devices & High Voltage Technol, 38D Nadbystrzycka Str, PL-20618 Lublin, Poland

来源：

HIGH TEMPERATURE MATERIAL PROCESSES | 2019年 / 23卷 / 01期

关键词：

germanium; SF6; ICP process; solar cell; THERMAL-CONDUCTIVITY; SOLAR-CELL; SILICON;

D O I：

10.1615/HighTempMatProc.2019029959

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Inductively coupled Ar/SF6 plasma (ICP) etching p-type germanium (Ge) substrate used for a multijunction solar cell (MJ SC) was investigated at different ICP power levels and SF6 flow rates at a constant working pressure of 7 Pa. The etching rate of Ge increases linearly from 11.9 to 19.4 mu m/min and surface roughness decreases as the ICP power level increases from 400 to 650 W at SF6 flow rate of 300 scan. Also, the etching rate of Ge increases by a power law from 8.0 to 16.7 mu m/min as the SF6 flow rate increases from 50 to 300 scan at ICP power of 570 W. OES and XPS studies were carried out using NIST databases. Identifications for some calculated Ritz lines were suggested.

引用

页码：57 / 70

页数：14

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