Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors

被引：39

作者：

Rudenko, Tamara ^{[1
]}

Nazarov, Alexey ^{[1
]}

Ferain, Isabelle ^{[2
]}

Das, Samaresh ^{[2
]}

Yu, Ran ^{[2
]}

Barraud, Sylvain ^{[3
]}

Razavi, Pedram ^{[2
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine

[2] Univ Coll Cork Lee Maltings, Tyndall Natl Inst, Cork 30, Ireland

[3] CEA LETI, F-38054 Grenoble 9, France

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 21期

基金：

爱尔兰科学基金会;

关键词：

ELECTRON; SIMULATION; INVERSION; LAYERS;

D O I：

10.1063/1.4767353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effective electron mobility in long-channel silicon-on-insulator junctionless multigate metaloxide-semiconductor transistors is experimentally studied. It is found that the mobility in heavily doped narrow nanowire (NW) devices at low to moderately high carrier densities significantly exceeds that in wide (planar) devices with the same silicon thickness and doping and, in a certain range of carrier densities, it exceeds the mobility in bulk silicon with the same doping concentration. This effect increases when decreasing the NW width. The possible origins of this effect are discussed. These results are extremely encouraging for the development of junctionless NW transistors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767353]

引用

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