Branching characteristics of GaN multipods grown by using hydride vapor phase epitaxy

被引:1
作者
Sohn, Yuri [1 ]
Kim, Chinkyo
机构
[1] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea
关键词
GaN; multipods; hydride vapor phase epitaxy;
D O I
10.3938/jkps.53.1393
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
GaN multipods were grown on c-plane sapphire substrates by using hydride vapor phase epitaxy (HVPE) and their branching characteristics were investigated by utilizing scanning electron microscopy. A catalyst-free vapor-solid growth mechanism gave rise to diversity in the formation of multipods in various structures. We found that the core structure primarily determined the branching configuration of the sideward GaN nanorods. Depending on whether the core had a zincblende structure or wurtzite structure, either 3-fold symmetric multipods without a vertical nanorod or 6-fold multipods were favorably grown.
引用
收藏
页码:1393 / 1396
页数:4
相关论文
共 50 条
[31]   Hydride vapor phase epitaxy reactor for bulk GaN growth [J].
Voronenkov, Vladislav ;
Bochkareva, Natalia ;
Gorbunov, Ruslan ;
Zubrilov, Andrey ;
Kogotkov, Viktor ;
Latyshev, Philippe ;
Lelikov, Yuri ;
Leonidov, Andrey ;
Shreter, Yuri .
2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,
[32]   Extended defects and polarity of hydride vapor phase epitaxy GaN [J].
J. Jasinski ;
Z. Liliental-Weber .
Journal of Electronic Materials, 2002, 31 :429-436
[33]   Extended defects and polarity of hydride vapor phase epitaxy GaN [J].
Jasinski, J ;
Liliental-Weber, Z .
JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (05) :429-436
[34]   Modulated growth of thick GaN with hydride vapor phase epitaxy [J].
Zhang, W ;
Riemann, T ;
Alves, HR ;
Heuken, M ;
Meister, D ;
Kriegseis, W ;
Hofmann, DM ;
Christen, J ;
Krost, A ;
Meyer, BK .
JOURNAL OF CRYSTAL GROWTH, 2002, 234 (04) :616-622
[35]   Si Doping of GaN in Hydride Vapor-Phase Epitaxy [J].
E. Richter ;
T. Stoica ;
U. Zeimer ;
C. Netzel ;
M. Weyers ;
G. Tränkle .
Journal of Electronic Materials, 2013, 42 :820-825
[36]   Indium assisted hydride vapor phase epitaxy of GaN film [J].
Yu, Guanghui ;
Lei, Benliang ;
Ye, Haohua ;
Meng, Sheng ;
Qi, Ming ;
Li, Aizhen ;
Ruterana, Pierre ;
Chen, Jun ;
Nouet, Gerard .
JOURNAL OF CERAMIC PROCESSING RESEARCH, 2006, 7 (02) :180-182
[37]   Growth and doping of bulk GaN by hydride vapor phase epitaxy [J].
张育民 ;
王建峰 ;
蔡德敏 ;
任国强 ;
徐俞 ;
王明月 ;
胡晓剑 ;
徐科 .
Chinese Physics B, 2020, (02) :44-57
[38]   Growth and doping of bulk GaN by hydride vapor phase epitaxy [J].
Zhang, Yu-Min ;
Wang, Jian-Feng ;
Cai, De-Min ;
Ren, Guo-Qiang ;
Xu, Yu ;
Wang, Ming-Yue ;
Hu, Xiao-Jian ;
Xu, Ke .
CHINESE PHYSICS B, 2020, 29 (02)
[39]   The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures [J].
Jahn, U. ;
Musolino, M. ;
Laehnemann, J. ;
Dogan, P. ;
Garrido, S. Fernandez ;
Wang, J. F. ;
Xu, K. ;
Cai, D. ;
Bian, L. F. ;
Gong, X. J. ;
Yang, H. .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 31 (06)
[40]   Thick GaN layers grown by hydride vapor-phase epitaxy:: hetero- versus homo-epitaxy [J].
Hageman, PR ;
Kirilyuk, V ;
Corbeek, WHM ;
Weyher, JL ;
Lucznik, B ;
Bockowski, M ;
Porowski, S ;
Müller, S .
JOURNAL OF CRYSTAL GROWTH, 2003, 255 (3-4) :241-249