EMI Mitigation Induced by An IGBT Driver Based on A Controlled Gate Current Profile

被引：0
作者：
Martinez-Padron, Daniel S. [1 ]
Patin, Nicolas [1 ]
Monmasson, Eric [2 ]
机构：
[1] Univ Technol Compiegne, Roberval Mechan Energy & Elect, Ctr Rech Royallieu, F-603196020 Compiegne, France
[2] CY Cergy Paris Univ, SATIE Lab, Cergy Pontoise, France
来源：
2022 24TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'22 ECCE EUROPE) | 2022年
关键词：
Gate driver; IGBT; Electromagnetic interference (EMI); Switching losses; EMI/EMC; IMPROVEMENT; DV/DT; DI/DT;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The transistors used in power electronics applications are source of electromagnetic interference(EMI) during switching process. In this work a gate current profile to reduce conducted EMI is proposed. It is based on the gate charge curve and it allows to control the conducted EMI generation with two degrees of freedom. In order to evaluate the performance of proposed method, it is compared with a validated method in the literature, namely, CATS method. It is shown that, for the same level of power switching losses, the conducted EMI generation is less with the proposed method.
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页数：10
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