Demonstration of a 4H SiC betavoltaic cell

被引：134

作者：

Chandrashekhar, MVS ^{[1
]}

Thomas, CI ^{[1
]}

Li, H ^{[1
]}

Spencer, MG ^{[1
]}

Lal, A ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 03期

关键词：

D O I：

10.1063/1.2166699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A betavoltaic cell in 4H SiC is demonstrated. A p-n diode structure was used to collect the charge from a 1 mCi Ni-63 source. An open circuit voltage of 0.72 V and a short circuit current density of 16.8 nA/cm(2) were measured in a single p-n junction. A 6% lower bound on the power conversion efficiency was obtained. A simple photovoltaic-type model was used to explain the results. Fill factor and backscattering effects were included in the efficiency calculation. The performance of the device was limited by edge recombination.

引用

页码：1 / 3

页数：3

共 11 条

[1] ENERGY-DEPENDENCE OF ELECTRON DAMAGE AND DISPLACEMENT THRESHOLD ENERGY IN 6H SILICON-CARBIDE [J].

BARRY, AL ;

LEHMANN, B ;

FRITSCH, D ;

BRAUNIG, D .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1991, 38 (06) :1111-1115

[2] CHARACTERISTICS OF NI-59 AND NI-63 [J].

BROSI, AR ;

BORKOWSKI, CJ ;

CONN, EE ;

GRIESS, JC .

PHYSICAL REVIEW, 1951, 81 (03) :391-395

[3] Elimination of current instability and improvement of RF power performance usingSi3N4 passivation in SiC lateral epitaxy MESFETs [J].

Cha, HY ;

Choi, YC ;

Konstantinov, AO ;

Harris, CI ;

Ericsson, P ;

Eastman, LF ;

Spencer, MG .

SOLID-STATE ELECTRONICS, 2004, 48 (07) :1233-1237

[4]

Guo H, 2003, BOSTON TRANSDUCERS'03: DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, P36

[5]

HOWELL JR, 1982, CATALOG RAD CONFIGUR, P96

[6] BANDGAP DEPENDENCE AND RELATED FEATURES OF RADIATION IONIZATION ENERGIES IN SEMICONDUCTORS [J].

KLEIN, CA .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :2029-+

[7] Self-reciprocating radioisotope-powered cantilever [J].

Li, H ;

Lal, A ;

Blanchard, J ;

Henderson, D .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (02) :1122-1127

[8] Ultrahigh-quality silicon carbide single crystals [J].

Nakamura, D ;

Gunjishima, I ;

Yamaguchi, S ;

Ito, T ;

Okamoto, A ;

Kondo, H ;

Onda, S ;

Takatori, K .

NATURE, 2004, 430 (7003) :1009-1012

[9] Nanosecond risetime pulse characterization of SiC p+n junction diode breakdown and switching properties [J].

Neudeck, PG ;

Fazi, C .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :1037-1040

[10]

RYBICKI GC, 1996, P 25 IEE PHOT SPEC C, P93

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