A Fully Integrated 0.18 μm SiGe BiCMOS Low Power 60 GHz Receiver & Transmitter for High Data Rate Wireless Communications

被引：0

作者：

Yeo, Kiat Seng ^{[1
]}

Lim, Kok Meng ^{[1
,2
]}

Gu, Jiangmin ^{[1
,3
]}

Yan, Jinna ^{[1
]}

Wang, Keping ^{[1
]}

Lu, Yang ^{[1
,4
]}

Pan, Renjing ^{[1
]}

Lim, Wei Meng ^{[1
]}

Ma, Jian-Guo ^{[5
]}

机构：

[1] Nanyang Technol Univ, Singapore, Singapore

[2] Cadence Design Syst Inc, Singapore, Singapore

[3] Avago Technol, Singapore, Singapore

[4] 3M Singapore Pte Ltd, Singapore, Singapore

[5] Tianjin Univ, Tianjin, Peoples R China

来源：

2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2011年

关键词：

0.18 mu m; 60GHz; BiCMOS; millimeter wave; quadrature mixer; receiver; SiGe; sliding-IF; sub-harmonic; transmitter; wideband;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a 60 GHz low power RX and TX front ends are presented. The RX has more than 19 dB of gain between 58.2 and 67.8 GHz, an average NF of 8.7 across the frequency band of interest, and a P1dB of -24.4 dBm. The high performance RX chip only consumes 32.6 mW of power, including the buffers used to drive measurement equipment. The TX employs the sliding-IF scheme with first IF at one fifth of RF frequency. Results show a saturated power output of 12.7 dBm and a P1dB point at 11 dBm. It provides a bandwidth spanning from 48 GHz to 66 GHz.

引用

页数：2

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