A Fully Integrated 0.18 μm SiGe BiCMOS Low Power 60 GHz Receiver & Transmitter for High Data Rate Wireless Communications

被引：0

作者：

Yeo, Kiat Seng ^{[1
]}

Lim, Kok Meng ^{[1
,2
]}

Gu, Jiangmin ^{[1
,3
]}

Yan, Jinna ^{[1
]}

Wang, Keping ^{[1
]}

Lu, Yang ^{[1
,4
]}

Pan, Renjing ^{[1
]}

Lim, Wei Meng ^{[1
]}

Ma, Jian-Guo ^{[5
]}

机构：

[1] Nanyang Technol Univ, Singapore, Singapore

[2] Cadence Design Syst Inc, Singapore, Singapore

[3] Avago Technol, Singapore, Singapore

[4] 3M Singapore Pte Ltd, Singapore, Singapore

[5] Tianjin Univ, Tianjin, Peoples R China

来源：

2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2011年

关键词：

0.18 mu m; 60GHz; BiCMOS; millimeter wave; quadrature mixer; receiver; SiGe; sliding-IF; sub-harmonic; transmitter; wideband;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a 60 GHz low power RX and TX front ends are presented. The RX has more than 19 dB of gain between 58.2 and 67.8 GHz, an average NF of 8.7 across the frequency band of interest, and a P1dB of -24.4 dBm. The high performance RX chip only consumes 32.6 mW of power, including the buffers used to drive measurement equipment. The TX employs the sliding-IF scheme with first IF at one fifth of RF frequency. Results show a saturated power output of 12.7 dBm and a P1dB point at 11 dBm. It provides a bandwidth spanning from 48 GHz to 66 GHz.

引用

页数：2

共 50 条

[21] A 2.1 GHz 30 dBm power amplifier in 0.18 m SiGe BiCMOS process
Li, Zhiqun
He, Shidong
Zhu, Bihui
Zhang, Chi
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2018, 60 (04) : 834 - 840
[22] A fully monolithic 0.18 μm SiGe BiCMOS power amplifier design附视频
陈磊
阮颖
苏杰
张书霖
石春琦
赖宗声
半导体学报, 2011, (05) : 99 - 103
[23] A SiGe BiCMOS RMS power detector for high data rate wireless networks
Microwave Journal, 2007, 50 (10): : 186 - 190
[24] Integrated frequency synthesiser in SiGe BiCMOS technology for 60 and 24 GHz wireless applications
Herzel, F.
Glisic, S.
Winkler, W.
ELECTRONICS LETTERS, 2007, 43 (03) : 154 - 156
[25] Hardware efficient receiver for low-cost ultra-high rate 60 GHz wireless communications
Ulusoy, Ahmet Cagri
Liu, Gang
Trasser, Andreas
Schumacher, Hermann
INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 2011, 3 (02) : 121 - 129
[26] 2.4 GHz, 0.25 μm CMOS transmitter and receiver RFICs for wireless communications
Yen, CC
Chuang, HR
MICROWAVE JOURNAL, 2005, 48 (02) : 56 - +
[27] Compact low-power 154 GHz receiver front-end in 0.13 μm SiGe BiCMOS
Li, Huanbo
Chen, Jixin
Zhou, Peigen
Yu, Jiayang
Yan, Pinpin
Hou, Debin
Hong, Wei
IET MICROWAVES ANTENNAS & PROPAGATION, 2020, 14 (09) : 955 - 959
[28] A 340 GHz Fully Integrated Transmitter for High-Speed Communications
Deng, Xiaodong
Li, Yihu
Li, Jiankang
Wu, Wen
Xiong, Yong-Zhong
2014 14TH INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS (ISIC), 2014, : 300 - 303
[29] Fully integrated 60 GHz transceiver in SiGe BiCMOS, RF modules, and 3.6 Gbit/s OFDM data transmission
Glisic, Srdjan
Scheytt, J. Christoph
Sun, Yaoming
Herzel, Frank
Wang, Ruoyu
Schmalz, Klaus
Elkhouly, Mohamed
Choi, Chang-Soon
INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 2011, 3 (02) : 139 - 145
[30] A Wideband Fully Integrated SiGe Chipset for High Data Rate Communication at 240 GHz
Sarmah, N.
Vazquez, P. R.
Grzyb, J.
Foerster, W.
Heinemann, B.
Pfeiffer, U. R.
2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2016, : 181 - 184

← 1 2 3 4 5 →