Direct Patterning on Top-Gate Organic Thin-Film Transistors: Improvement of On/Off Ratio, Subthreshold Swing, and Uniformity

被引:17
作者
Huang, Fanming [1 ]
Xu, Yang [1 ]
Pan, Zhecheng [1 ]
Li, Wenwu [1 ,2 ]
Chu, Junhao [1 ,2 ]
机构
[1] East China Normal Univ, Sch Phys & Elect Sci, Tech Ctr Multifunct Magnetoopt Spect, Shanghai 200241, Peoples R China
[2] Fudan Univ, Shanghai Inst Intelligent Elect & Syst, Shanghai 200433, Peoples R China
基金
上海市自然科学基金;
关键词
Leakage current; on/off ratio; OTFTs; pattern; subthreshold swing; SEMICONDUCTOR; MOBILITY; LAYER;
D O I
10.1109/LED.2020.2998820
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Indacenodithiophene-co-benzothiadiazole (IDT-BT), diketopyrrolopyrrole-thieno[3,2-b]thiophene (DPPT-TT), and poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4, 5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (N2200) organic thin-film transistors (OTFTs) with a top-gate structure were patterned by simple oxygen plasma treatment instead of conventional processes such as photolithography and inkjet printing. The ungated layer, which is known to cause leakage current paths, was efficiently removed by oxygen plasma treatment. After patterning, the gate leakage current in OTFTs was suppressed below the order of 10(-9) A, the on/off current ratio of DPPT-TT OTFTs increased from 5 x 10(4) to 2 x 10(7), and the subthreshold swing extracted from N2200 OTFTs decreased from 1.6 to 0.3 V dec(-1). All the measured electrical parameters of the patterned OTFTs were distributed in narrower ranges than those of the corresponding non-patterned devices, indicating the high uniformity and reproducibility of the patterned OTFTs. Our low-cost and simple patterning method can be widely used to improve the electrical performance of OTFTs.
引用
收藏
页码:1082 / 1085
页数:4
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