Magnetization reversal and magnetoresistance in a lateral spin-injection device

被引：65

作者：

Lee, WY ^{[1
]}

Gardelis, S ^{[1
]}

Choi, BC ^{[1
]}

Xu, YB ^{[1
]}

Smith, CG ^{[1
]}

Barnes, CHW ^{[1
]}

Ritchie, DA ^{[1
]}

Linfield, EH ^{[1
]}

Bland, JAC ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 09期

关键词：

D O I：

10.1063/1.370504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the magnetization reversal and magnetoresistance (MR) behavior of a lateral spin-injection device. The device consists of a two-dimensional electron gas (2DEG) system in an InAs quantum well and two ferromagnetic (Ni80Fe20) contacts: an injector (source) and a detector (drain). Spin-polarized electrons are injected from the first contact and propagating through InAs are collected by the second contact. By engineering the shape of the permalloy film distinct switching fields (H-c) from the injector and the collector have been observed by scanning Kerr microscopy and MR measurements. Magneto-optic Kerr effect (MOKE) hysteresis loops demonstrate that there is a range of magnetic field (20-60 Oe), at room temperature, over which magnetization in one contact is aligned antiparallel to that in the other. The MOKE results are consistent with the variation of the magnetoresistance in the spin-injection device. (C) 1999 American Institute of Physics. [S0021-8979(99)07009-7].

引用

页码：6682 / 6685

页数：4

共 18 条

[1] Magnetoresistance behavior of submicron Ni80Fe20 wires [J].

Adeyeye, AO ;

Lauhoff, G ;

Bland, JAC ;

Daboo, C ;

Hasko, DG ;

Ahmed, H .

APPLIED PHYSICS LETTERS, 1997, 70 (08) :1046-1048

[2] OBSERVATION OF SPIN-POLARIZED-ELECTRON TUNNELING FROM A FERROMAGNET INTO GAAS [J].

ALVARADO, SF ;

RENAUD, P .

PHYSICAL REVIEW LETTERS, 1992, 68 (09) :1387-1390

[3] OBSERVATION OF THE INTERFACIAL-FIELD-INDUCED WEAK ANTILOCALIZATION IN INAS QUANTUM STRUCTURES [J].

CHEN, GL ;

HAN, J ;

HUANG, TT ;

DATTA, S ;

JANES, DB .

PHYSICAL REVIEW B, 1993, 47 (07) :4084-4087

[4] Shape dependence of the switching field in small structures [J].

Chui, ST .

IEEE TRANSACTIONS ON MAGNETICS, 1998, 34 (04) :1000-1002

[5] ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR [J].

DATTA, S ;

DAS, B .

APPLIED PHYSICS LETTERS, 1990, 56 (07) :665-667

[6] Spin injection: Theory and application to Johnson's spin switch [J].

Fert, A ;

Lee, SF .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1997, 165 (1-3) :115-120

[7]

GARDELIS S, 1998, P 24 INT C PHYS SEM

[8] In situ Raman spectroscopy of the selective etching of antimonides in GaSb/AlSb/InAs heterostructures [J].

Gatzke, C ;

Webb, SJ ;

Fobelets, K ;

Stradling, RA .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (04) :399-403

[9] BIPOLAR SPIN SWITCH [J].

JOHNSON, M .

SCIENCE, 1993, 260 (5106) :320-323

[10] Switching fields and magnetostatic interactions of thin film magnetic nanoelements [J].

Kirk, KJ ;

Chapman, JN ;

Wilkinson, CDW .

APPLIED PHYSICS LETTERS, 1997, 71 (04) :539-541

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