Voltage-in-Current Latency Insertion Method for Diodes and MOSFETs

被引：8

作者：

Chin, Wei Chun ^{[1
]}

Pashkovich, Andrei ^{[2
]}

Malinauskas, Kostas ^{[3
]}

Schutt-Aine, Jose E. ^{[4
]}

Ibrahim, Haidi ^{[1
]}

Ahmad, Nur Syazreen ^{[1
]}

Goh, Patrick ^{[1
]}

机构：

[1] Univ Sains Malaysia, Sch Elect & Elect Engn, Nibong Tebal 14300, Malaysia

[2] Silvaco Inc, Santa Clara, CA 95054 USA

[3] Silvaco Inc, Moscow 125047, Russia

[4] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 2020年 / 10卷 / 10期

关键词：

Integrated circuit modeling; Mathematical model; Topology; Packaging; Circuit stability; Numerical stability; Stability analysis; Circuit analysis; latency insertion method (LIM); nonlinear; METHOD LIM; TRANSIENT SIMULATION;

D O I：

10.1109/TCPMT.2020.3021413

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This article presents the improved formulations for the latency insertion method (LIM) for diodes and MOSFETs utilizing the voltage-in-current framework. LIM is a fast circuit simulation algorithm, which computes the solutions to the voltages and currents in a circuit in a leapfrog manner, instead of a simultaneous matrix solution typically performed in the modified nodal analysis formalism. This allows LIM to have a far superior scaling with respect to the dimensions of the circuit. The formulations presented here have the advantage of not being limited by the stability condition in LIM and thus allow the simulations to be performed at larger time steps. Numerical examples are presented, which illustrate the improved performances of the developed formulations.

引用

页码：1708 / 1720

页数：13

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