10 A, 2.4 kV power DiMOSFETs in 4H-SiC

被引：36

作者：

Ryu, SH ^{[1
]}

Agarwal, A

Richmond, J

Palmour, J

Saks, N

Williams, J

机构：

[1] Cree Inc, Durham, NC 27703 USA

[2] USN, Res Lab, Washington, DC 20375 USA

[3] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 06期

关键词：

avalanche; fast switching; high voltage; MOSFET; NO anneal; silicon carbide;

D O I：

10.1109/LED.2002.1004222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the characteristics of large area (3.3 x 3.3 mm(2)) high-voltage 4H-SiC DiMOSFETs. The MOSFETs show a peak MOS channel mobility of 22 cm(2)/V.s and a threshold voltage of 8.5 V at room temperature. The DiMOSFETs exhibit an on-resistance of 42 mOmega.cm(2) at room temperature and 85 mOmega.cm(2) at 200degreesC. Stable avalanche characteristics at approximately 2.4 kV are observed. An on-current of 10 A is measured on a 0.103 cm(2) device. High switching speed is also demonstrated. This suggests that the devices are capable of high-voltage, high-frequency, low-loss switching applications.

引用

页码：321 / 323

页数：3

共 12 条

[1]

ASANO K, 2001, P INT S POW SEM DEV

[2] COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES [J].

BHATNAGAR, M ;

BALIGA, BJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) :645-655

[3] Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide [J].

Chung, GY ;

Tin, CC ;

Williams, JR ;

McDonald, K ;

Di Ventra, M ;

Pantelides, ST ;

Feldman, LC ;

Weller, RA .

APPLIED PHYSICS LETTERS, 2000, 76 (13) :1713-1715

[4] Static and dynamic characteristics of 4H-SiC JFETs designed for different blocking categories [J].

Friedrichs, P ;

Mitlehner, H ;

Kaltschmidt, R ;

Weinert, U ;

Bartsch, W ;

Hecht, C ;

Dohnke, KO ;

Weis, B ;

Stephani, D .

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :1243-1246

[5]

HARA K, 1997, P INT C SIL CARB 3 N

[6] PROGRESS IN SILICON-CARBIDE SEMICONDUCTOR ELECTRONICS TECHNOLOGY [J].

NEUDECK, PG .

JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (04) :283-288

[7]

RYU S, 2001, P INT C SIL CARB REL

[8]

RYU S, 2001, P MAT RES SOC S, V640

[9] Rugged power MOSFETs in 6H-SiC with blocking capability up to 1800V [J].

Schörner, R ;

Friedrichs, P ;

Peters, D ;

Mitlehner, H ;

Weis, B ;

Stephani, D .

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :1295-1298

[10] High-voltage double-implanted power MOSFET's in 6H-SiC [J].

Shenoy, JN ;

Cooper, JA ;

Melloch, MR .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (03) :93-95

← 1 2 →