Interfacial Reactions in Sn-Ag/Co Couples

被引：8

作者：

Chen, Sinn-wen ^{[1
]}

Chen, Tung-Kai ^{[1
]}

Chang, Jui-shen ^{[1
]}

Hsu, Chia-Ming ^{[2
]}

Chen, Wei-An ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Chem Engn, Hsinchu 300, Taiwan

[2] Natl United Univ, Dept Chem Engn, Miaoli 360, Taiwan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2014年 / 43卷 / 02期

关键词：

Sn-Ag; Co; interfacial reactions; PB-FREE SOLDERS; THERMOELECTRIC-MATERIALS; DIFFUSION BARRIER; CO ADDITION; NI-P; GROWTH; JOINTS; ELECTROMIGRATION;

D O I：

10.1007/s11664-013-2927-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sn-Ag alloys are important solders, and Co and Co alloys are investigated as barrier layers. Interfacial reactions in Sn-Ag/Co couples were examined in this study for Ag contents of 1.0 wt.%, 2.0 wt.%, and 3.5 wt.% and reaction temperatures of 250A degrees C, 200A degrees C, and 150A degrees C. Only CoSn3 formed in Sn-Ag/Co couples reacted at 250A degrees C, but both CoSn3 and Ag3Sn formed in couples reacted at 200A degrees C and 150A degrees C. The reaction layer was 100 mu m thick in Sn-3.5 wt.%Ag/Co couples reacted at 200A degrees C for 110 h. The reaction rates were lower if Ag was added, but remained very fast compared with those for Ni and Ni-based substrates.

引用

页码：636 / 639

页数：4

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