Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer

被引：3

作者：

Tang Zhen-Jie ^{[1
]}

Li Rong ^{[2
]}

Yin Jiang ^{[3
]}

机构：

[1] Anyang Normal Univ, Coll Phys & Elect Engn, Anyang 455000, Peoples R China

[2] Anyang Normal Univ, Sch Math & Stat, Anyang 455000, Peoples R China

[3] Nanjing Univ, Dept Mat Sci & Engn, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

CHINESE PHYSICS B | 2013年 / 22卷 / 09期

基金：

中国国家自然科学基金;

关键词：

composition modulated films; memory device; charge trap; atomic layer deposition; NONVOLATILE MEMORY; STORAGE; TRANSISTORS; RETENTION; DEVICES; OXIDES; SI;

D O I：

10.1088/1674-1056/22/9/097701

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A composition-modulated (HfO2)(x)(Al2O3)(1-x) charge trapping layer is proposed for charge trap flash memory by controlling the Al atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated (HfO2)(x)(Al2O3)(1-x) as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application.

引用

页数：4

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