High-Performance SiC Nanobelt Photodetectors with Long-Term Stability Against 300 °C up to 180 Days

被引:101
作者
Yang, Tao [1 ]
Chen, Shanliang [2 ]
Li, Xiaoxiao [2 ]
Xu, Xiaojie [3 ]
Gao, Fengmei [2 ]
Wang, Lin [2 ]
Chen, Junhong [1 ]
Yang, Weiyou [2 ]
Hou, Xinmei [1 ]
Fang, Xiaosheng [3 ]
机构
[1] Univ Sci & Technol Beijing, Collaborat Innovat Ctr Steel Technol, Beijing 100083, Peoples R China
[2] Ningbo Univ Technol, Inst Mat, Ningbo 315016, Zhejiang, Peoples R China
[3] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China
基金
中国国家自然科学基金;
关键词
B-doping; detectivity; photodetectors; SiC nanobelt; stability; HIGH-DETECTIVITY; ULTRAVIOLET PHOTODETECTORS; FIELD-EMISSION; 3C-SIC NANOWIRES; BAND; SURFACE; NANOSTRUCTURES; NM;
D O I
10.1002/adfm.201806250
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In the present work, high-performance photodetectors (PDs) based on a single B-doped 3C-SiC nanobelt, which are synthesized via catalyst-free pyrolysis of polymeric precursors of polysilazane, are reported. The as-built PDs have a high responsivity and external quantum efficiency of 6.37 x 10(5) A.W-1 and 2.0 x 10(8)% under 405 nm light with a power density of 0.14 mW.cm(-2) at 5 V, respectively. The detectivity of the PDs is measured to be of 6.86 x 10(14) Jones. Moreover, the B-doped 3C-SiC nanobelt PDs exhibit a long-term stability against 300 degrees C up to 180 days, suggesting their promising applications to be served under harsh conditions.
引用
收藏
页数:9
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