Enhanced light detection by annealed vertically aligned CeO2 nanorods

被引：13

作者：

Devi, Ngasepam Monica ^{[1
]}

Singh, Naorem Khelchand ^{[1
]}

机构：

[1] Natl Inst Technol, Dept Elect & Commun Engn, Nagaland 797103, India

来源：

MATERIALS RESEARCH BULLETIN | 2019年 / 117卷

关键词：

Nanostructures; Oxides; Vapor deposition; Defects; ELECTRONIC-STRUCTURE; UV PHOTODETECTOR; CERIA; PHOTOLUMINESCENCE; NANOPARTICLES; PERFORMANCE; FABRICATION; NANOSTRUCTURES; CHEMISTRY; STRAIN;

D O I：

10.1016/j.materresbull.2019.04.038

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we investigate the growth of uniform cerium oxide (CeO2) nanorods (NRs) in vertically aligned form by using glancing angle deposition (GLAD) technique on silicon substrates. The samples were annealed at different temperatures and 800 degrees C proved to be the best annealing temperature. FESEM revealed the growth of CeO2 NRs in vertically well-aligned form. XRD data showed better crystallinity and sharpened peaks in the case of annealed samples. Room temperature photoluminescence (PL) spectra obtained for the samples can be related to the abundant defects in the NRs. The annealed CeO2 NR device showed increased photocurrent which can be attributed to the oxygen adsorption and desorption process that occurred at the NR surface. Under UV illumination, the device annealed at 800 degrees C displayed maximum responsivity of 7.8 A/W, detectivity of 3.26 x 10(12) Jones and noise equivalent power of 1.29 x 10(-14) W at 4 V bias. Thus, the annealed device exhibited good photodetection capabilities.

引用

页码：103 / 112

页数：10

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