Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method

被引：2

作者：

Mokhov, E. N. ^{[1
]}

Nagalyuk, S. S. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷

关键词：

Silicon Carbide (SiC); bulk crystal; dislocation density; micropipe; free lateral overgrowth; POLYTYPE TRANSFORMATIONS; OVERGROWTH; LAYERS; MESAS;

D O I：

10.4028/www.scientific.net/MSF.740-742.60

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The distribution of extended defects in silicon carbide (SiC) crystals grown on profiled seeds by the sublimation (physical vapor transport) method has been studied by optical microscopy in combination with chemical etching. It is established that free lateral growth on protruding relief elements (mesas) is accompanied by a sharp decrease in the density of threading dislocations and micropipes. The decreased density of dislocations is retained after growing a thick layer that involves the overgrowth of grooves that separated individual mesas.

引用

页码：60 / 64

页数：5

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