Studies of Point Defect Formation and Self-Compensation in Indium Doped ZnO Nanorods by STM and STS

被引：0

作者：

Gonzalez-Carrazco, A. ^{[1
]}

Herrera-Zaldivar, M. ^{[1
]}

Pal, U. ^{[2
]}

机构：

[1] Univ Nacl Autonoma Mexico, Ctr Ciencias Mat Condensada, Ensenada 22800, Baja California, Mexico

[2] Univ Autonoma Puebla, Inst Fis, Puebla 72570, Pue, Mexico

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2008年 / 8卷 / 12期

关键词：

Scanning Tunneling Microscopy; Indium-Doped ZnO; Nanostructures; Self-Compensation; Point Defects;

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The effect of indium doping on the point defect formation in ZnO nanostructures is studied by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) techniques. While the incorporation of a donor dopant like indium should increase the n-type conductivity of ZnO nanostructures, it has been found that formation of V-Zn native acceptors in heavily doped ZnO nanostructures produces self-compensation effect, creating acceptor states in their band gap. Presence of both donor and acceptor states in heavily indium doped ZnO nanostructures are probed and identified. The mechanism of formation of such donor and acceptor states is discussed.

引用

页码：6598 / 6602

页数：5

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