Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy

被引：201
作者：
Chen, Kun [1 ,2 ]
Wan, Xi [1 ,2 ]
Xie, Weiguang [3 ]
Wen, Jinxiu [4 ,5 ]
Kang, Zhiwen [1 ,2 ]
Zeng, Xiaoliang [6 ]
Chen, Huanjun [4 ,5 ]
Xu, Jianbin [1 ,2 ]
机构：
[1] Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong 999077, Hong Kong, Peoples R China
[2] Chinese Univ Hong Kong, Mat Sci & Technol Res Ctr, Hong Kong 999077, Hong Kong, Peoples R China
[3] Jinan Univ, Dept Phys, Siyuan Lab, Guangzhou 510632, Guangdong, Peoples R China
[4] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[5] Sun Yat Sen Univ, Sch Phys & Engn, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[6] Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China
来源：
ADVANCED MATERIALS | 2015年 / 27卷 / 41期
基金：
中国国家自然科学基金;
关键词：
LIGHT-EMITTING-DIODES; MOLYBDENUM-DISULFIDE; ENERGY-CONVERSION; LAYER MOS2; PHOTOTRANSISTORS; GENERATION; EXCITONS;
D O I：
10.1002/adma.201502375
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Lateral WS2-MoS2 heterostructures are synthesized by a shortcut one-step growth recipe with low-cost and soluble salts. The 2D spatial distributions of the built-in potential and the related electric field of the lateral WS2-MoS2 heterostructure are quantitatively analyzed by scanning Kelvin probe force microscopy revealing the fundamental attributes of the lateral heterostructure devices.
引用
收藏
页码：6431 / +
页数：8
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