Wetting of Pb on oxidized micropatterned Si wafers

被引：12

作者：

Chatain, D

Lesueur, C

Baland, JP

机构：

[1] Univ Aix Marseille 2, Ctr Rech Mat Condensee & Nanosci, Lab Propre, CNRS, F-13288 Marseille 9, France

[2] Univ Aix Marseille 3, F-13288 Marseille, France

[3] Univ Mons, Ctr Rech Modelisat Mol, B-7000 Mons, Belgium

来源：

LANGMUIR | 2006年 / 22卷 / 09期

关键词：

D O I：

10.1021/la053026i

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The wetting of lead on silicon wafers with regularly patterned holes, and covered by native silica, has been investigated at 610 K under ultrahigh vacuum conditions. The advancing and receding macroscopic contact angles have been measured by slowly compressing and stretching a liquid lead bridge between two identically patterned substrates. These angles are shown to depend on the distribution of the holes in the wafers and the continuity of the triple line.

引用

收藏

页码：4230 / 4236

页数：7

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