Strong efficiency enhancement of organic light-emitting devices using pin type structures

We have strong increased the efficiency of organic light-emitting diode utilizing inorganic material by n-and p-doped transport layers as appropriate blocking layers. These developments are supported by the diversity of possible structures. The devices because of this pin structure possess exponential forward characteristics up to comparatively high current densities. It has obvious virtues in very high luminescence efficiencies as well as low operating voltage. The devices achieve high brightness at very low operating voltage such as 1040 cd/m(2) at a voltage of 3.4 V. The devices were achieved very high current efficiency and power efficiency such as 77.88 cd/A at a voltage of 3 V and 86.59 lm/W at a voltage of 2.8 V, respectively.