1.54 μm Photoluminescence emission from Er-implanted SiO2 crystal and SiO2 glass

被引：3
作者：
Li, Shiling [1 ,2 ]
Fu, Gang [3 ]
Ye, Yongkai [2 ]
机构：
[1] Tianjin Univ, Sch Precis Instruments & Optoelect Engn, Dept Optoelect & Informat Engn, Tianjin 300072, Peoples R China
[2] Qufu Normal Univ, Shandong Prov Key Lab Laser & Informat Technol, Coll Phys & Engn, Qufu 273165, Peoples R China
[3] Shandong Jianzhu Univ, Sch Sci, Jinan 250014, Peoples R China
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2013年 / 307卷
基金：
中国国家自然科学基金;
关键词：
Erbium; Ion implantation; Photoluminescence; SiO2; crystal; glass; WAVE-GUIDE AMPLIFIERS; ERBIUM; GAIN;
D O I：
10.1016/j.nimb.2012.11.065
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Er-doped materials are of great importance for application in optical communication. SiO2 crystal and silica glass have been implanted with 500 keV Er ions at a fluence of 3 x 10(15) ions/cm(2), with the aim of incorporating the rare-earth dopant on an optically active site. Erbium concentration profiles were analyzed by Rutherford backscattering technology. Photoluminescence (PL) spectrometry studies were performed at room temperature and at 12 K. The characteristic photoluminescence of Er3+ around 1.54 mu m is observed at room temperature in as-implanted SiO2 crystal and SiO2 glass. And the influence of annealing on the PL intensity is studied. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：434 / 437
页数：4
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