Amorphous chalcogenide Se1-x-yTexPy semiconducting alloys:: thermal and mechanical properties

被引:66
作者
Kasap, SO [1 ]
Wagner, T
Aiyah, V
Krylouk, O
Bekirov, A
Tichy, L
机构
[1] Univ Saskatchewan, Dept Elect Engn, Elect Mat Res Labs, Saskatoon, SK S7N 0W0, Canada
[2] Acad Sci Czech Republ, Joint Lab Solid State Chem, Pardubice, Czech Republic
基金
加拿大自然科学与工程研究理事会;
关键词
D O I
10.1023/A:1004644631338
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thermal and mechanical properties of ternary Se rich Se1-x-yTexPy semiconducting glasses (Te < 20 at % and P < 10 at %) in vitreous bulk and film form have been studied by differential scanning calorimetry (DSC) and microhardness measurements. Bulk vitreous samples were prepared by conventional melt quenching techniques and the amorphous photoreceptor films were prepared by vacuum deposition onto oxidized aluminum substrates whose electrophotographic properties were reported previously. We measured the glass transition temperature T-g starting from a well defined thermal history and using both heating and cooling scans as a function of composition. T-g increases monotonically with both Te and P content. Both bulk and film samples evince similar compositional T-g dependence. The increase in T-g with the P content in the glasses follows the Tanaka rule, that is, P addition has a networking effect due to the trivalent nature of the P atom and increases the mean coordination number. Both Te and P additions initially inhibit crystallization but at high Te contents (similar to 20 at %) the crystallization behavior is comparable to the pure a-Se case. Glasses with similar to 10 at % Te seem to have the greatest resistance to crystallization. The crystallization behavior does not correlate with the T-g behavior over the whole composition range. The Vickers microhardness H-V increases with both Te and P content. H-V vs. Te and P behavior is similar to that of T-g vs. Te and P content . The compositional dependence of both H-V and T-g can be explained by the same factors that reduce Se chain mobility. (C) 1999 Kluwer Academic Publishers.
引用
收藏
页码:3779 / 3787
页数:9
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