Nitridation and oxynitridation of Si to control interfacial reaction with HfO2

被引：9

作者：

Katarnreddy, Rajesh ^{[2
,3
]}

Inman, Ronald ^{[2
]}

Jursich, Gregory ^{[2
]}

Soulet, Axel ^{[2
]}

Takoudis, Christos ^{[1
,3
]}

机构：

[1] Univ Illinois, Dept Bioengn, Chicago, IL 60607 USA

[2] Amer Air Liquide, Chicago Res Ctr, Countryside, IL 60525 USA

[3] Univ Illinois, Dept Chem Engn, Chicago, IL 60607 USA

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 23期

基金：

美国国家科学基金会;

关键词：

Nitridation of silicon; Diffusion barrier layer; Atomic layer deposition; Hafnium oxide;

D O I：

10.1016/j.tsf.2008.05.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the effectiveness of SiN and SiON barrier layer in controlling the interfacial reaction between Atomic Layer Deposited (ALD) HfO2 film and the Si substrate. The HfO2 film was found to form silicate and silicide at the interface with Si after 5 min post deposition annealing in Ar at 800 and 1000 degrees C as observed by scanning transmission electron microscopy/electron energy loss spectroscopy and X-ray photoelectron spectroscopy analysis of the annealed ALD films. A 1.5 nm-thick Chemical Vapor Deposited (CVD) SiN was found to effectively prevent interfacial reaction during annealing at temperatures up to 1000 degrees C. Also, SiON deposited either by annealing the Si substrate in N2O (low N-content) or by annealing CVD SiN in O-2 (high N-content) was found to prevent silicate and silicide formation at the interface. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：8498 / 8506

页数：9

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