Substrate Agnostic Monolithic Integration of the Inline Phase-Change Switch Technology

被引：0

作者：

El-Hinnawy, N. ^{[1
,2
]}

Borodulin, P. ^{[1
,3
]}

Ezis, A. ^{[1
]}

Furrow, C. ^{[1
]}

Padilla, C. ^{[1
]}

King, M. ^{[1
,4
]}

Jones, E. ^{[1
]}

Wagner, B. ^{[1
]}

Paramesh, J. ^{[2
]}

Bain, J. ^{[2
]}

Nichols, D. ^{[1
]}

Young, R. M. ^{[1
]}

机构：

[1] Northrop Grumman Miss Syst, Linthicum, MD 21044 USA

[2] Carnegie Mellon Univ, Pittsburgh, PA 15232 USA

[3] Johns Hopkins Univ, Baltimore, MD 21218 USA

[4] North Carolina State Univ, Raleigh, NC 27606 USA

来源：

2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2016年

关键词：

germanium telluride; GeTe; inline phase-change switch; IPCS; RF switch; reconfigurable; monolithic integration; SAMI;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Omni-directional GeTe inline phase-change switches (IPCS) have been fabricated and heterogeneously integrated with commercial SiGe BiCMOS technology to create a reconfigurable receiver. The reconfigurable receiver required integrating thirteen (13) 8-port and two (2) 4-port omni-directional switch circuits with a commercial SiGe IC, requiring very stable and repeatable performance from the 112 integrated GeTe IPCS devices. Insertion loss, isolation, and cycling data will be presented, as well as performance issues encountered during the heterogeneous integration process. A new monolithic integration scheme is briefly discussed that is independent of the substrate and semiconductor technology used. This integration plan enables the monolithic fabrication of GeTe IPCS devices on any semiconductor technology, allowing low-loss, low-power, broadband reconfigurable RF systems and SoCs (system-onchip) to be realized in any technology.

引用

页数：4

共 19 条

[1]

[Anonymous], P SPIE

[2]

[Anonymous], 2014 IEEE COMP SEM I

[3]

Boles T., 2011, 2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2011), P1, DOI DOI 10.1109/COMCAS.2011.6105783

[4] Phase change memory technology [J].

Burr, Geoffrey W. ;

Breitwisch, Matthew J. ;

Franceschini, Michele ;

Garetto, Davide ;

Gopalakrishnan, Kailash ;

Jackson, Bryan ;

Kurdi, Buelent ;

Lam, Chung ;

Lastras, Luis A. ;

Padilla, Alvaro ;

Rajendran, Bipin ;

Raoux, Simone ;

Shenoy, Rohit S. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (02) :223-262

[5]

Crunteanu A, 2014, IEEE MTT S INT MICR, DOI 10.1109/MWSYM.2014.6848417

[6]

El-Hinnawy N., 2015, 2015 IEEE MTT-S International Microwave Symposium (IMS2015), P1, DOI 10.1109/MWSYM.2015.7166859

[7]

El-Hinnawy N., 2014, 2014 IEEE Compd. Semicond. Integr. Circuit Symp, P1, DOI [DOI 10.1109/CSICS.2014.6978522, 10.1109/CSICS.2014.6978522]

[8] Low-loss latching microwave switch using thermally pulsed non-volatile chalcogenide phase change materials [J].

El-Hinnawy, Nabil ;

Borodulin, Pavel ;

Wagner, Brian P. ;

King, Matthew R. ;

Jones, Evan B. ;

Howell, Robert S. ;

Lee, Michael J. ;

Young, Robert M. .

APPLIED PHYSICS LETTERS, 2014, 105 (01)

[9] A Four-Terminal, Inline, Chalcogenide Phase-Change RF Switch Using an Independent Resistive Heater for Thermal Actuation [J].

El-Hinnawy, Nabil ;

Borodulin, Pavel ;

Wagner, Brian ;

King, Matthew R. ;

Mason, John S., Jr. ;

Jones, Evan B. ;

McLaughlin, Sean ;

Veliadis, Victor ;

Snook, Megan ;

Sherwin, Marc E. ;

Howell, Robert S. ;

Young, Robert M. ;

Lee, Michael J. .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (10) :1313-1315

[10] Morphological analysis of GeTe in inline phase change switches [J].

King, Matthew R. ;

El-Hinnawy, Nabil ;

Salmon, Mike ;

Gu, Jitty ;

Wagner, Brian P. ;

Jones, Evan B. ;

Borodulin, Pavel ;

Howell, Robert S. ;

Nichols, Doyle T. ;

Young, Robert M. .

JOURNAL OF APPLIED PHYSICS, 2015, 118 (09)

← 1 2 →